| Part Number | APT45GP120JDQ2 |
|---|---|
| Part Status | Active |
| IGBT Type | PT |
| Configuration | Single |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 75A |
| Power - Max | 329W |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A |
| Current - Collector Cutoff (Max) | 750µA |
| Input Capacitance (Cies) @ Vce | 4nF @ 25V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | ISOTOP |
| Supplier Device Package | ISOTOP® |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
APT45GP120B2DQ2G | Microsemi Corporation | IGBT 1200V 113A 625W TMAX | Details |
 |
APT45GP120BG | Microsemi Corporation | IGBT 1200V 100A 625W TO247 | Details |
|
APT45GP120J | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | Details |
|
APT45GP120JDQ2 | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | Details |
|
APT45GR65B | Microsemi Corporation | IGBT 650V 92A 357W TO-247 | Details |
 |
APT45GR65B2DU30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
|
APT45GR65BSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
|
APT45GR65SSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
 |
APT45M100J | Microsemi Corporation | MOSFET N-CH 1000V 45A SOT-227 | Details |
