APT45GR65BSCD10 - Microsemi Corporation

Part Number	APT45GR65BSCD10
Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	118A
Current - Collector Pulsed (Icm)	224A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 45A
Power - Max	543W
Switching Energy	-
Input Type	Standard
Gate Charge	203nC
Td (on/off) @ 25°C	15ns/100ns
Test Condition	433V, 45A, 4.3 Ohm, 15V
Reverse Recovery Time (trr)	80ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT45GP120B2DQ2G	Microsemi Corporation	IGBT 1200V 113A 625W TMAX	Details
APT45GP120BG	Microsemi Corporation	IGBT 1200V 100A 625W TO247	Details
APT45GP120J	Microsemi Corporation	IGBT 1200V 75A 329W SOT227	Details
APT45GP120JDQ2	Microsemi Corporation	IGBT 1200V 75A 329W SOT227	Details
APT45GR65B	Microsemi Corporation	IGBT 650V 92A 357W TO-247	Details
APT45GR65B2DU30	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO	Details
APT45GR65BSCD10	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO	Details
APT45GR65SSCD10	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO	Details
APT45M100J	Microsemi Corporation	MOSFET N-CH 1000V 45A SOT-227	Details