| Número de pieza | APT45GP120JDQ2 |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | PT |
| Configuración | Single |
| Voltaje: ruptura del emisor del colector (máximo) | 1200V |
| Current - Collector (Ic) (Max) | 75A |
| Potencia - Max | 329W |
| Vce (on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A |
| Corriente - corte de colector (máximo) | 750µA |
| Capacitancia de entrada (Cies) @ Vce | 4nF @ 25V |
| Entrada | Standard |
| Termistor NTC | No |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | ISOTOP |
| Paquete de dispositivo del proveedor | ISOTOP® |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
APT45GP120B2DQ2G | Microsemi Corporation | IGBT 1200V 113A 625W TMAX | Detalles |
 |
APT45GP120BG | Microsemi Corporation | IGBT 1200V 100A 625W TO247 | Detalles |
|
APT45GP120J | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | Detalles |
|
APT45GP120JDQ2 | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | Detalles |
|
APT45GR65B | Microsemi Corporation | IGBT 650V 92A 357W TO-247 | Detalles |
 |
APT45GR65B2DU30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Detalles |
|
APT45GR65BSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Detalles |
|
APT45GR65SSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Detalles |
 |
APT45M100J | Microsemi Corporation | MOSFET N-CH 1000V 45A SOT-227 | Detalles |
