IPN70R1K2P7SATMA1 - Infineon Technologies

Part Number	IPN70R1K2P7SATMA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	174pF @ 400V
FET Feature	-
Power Dissipation (Max)	6.3W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	TO-261-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IPN70R1K0CEATMA1	Infineon Technologies	MOSFET COOLMOS 700V SOT223-3	Details
IPN70R1K2P7SATMA1	Infineon Technologies	COOLMOS P7 700V SOT-223	Details
IPN70R1K4P7SATMA1	Infineon Technologies	CONSUMER	Details
IPN70R1K5CEATMA1	Infineon Technologies	MOSFET NCH 700V 5.4A SOT223	Details
IPN70R2K0P7SATMA1	Infineon Technologies	COOLMOS P7 700V SOT-223	Details
IPN70R2K1CEATMA1	Infineon Technologies	MOSFET COOLMOS 700V SOT223-3	Details
IPN70R360P7SATMA1	Infineon Technologies	CONSUMER	Details
IPN70R450P7SATMA1	Infineon Technologies	COOLMOS P7 700V SOT-223	Details
IPN70R600P7SATMA1	Infineon Technologies	CONSUMER	Details
IPN70R750P7SATMA1	Infineon Technologies	COOLMOS P7 700V SOT-223	Details