GB02SHT03-46 - GeneSiC Semiconductor

Part Number	GB02SHT03-46
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	300V
Current - Average Rectified (Io)	4A (DC)
Voltage - Forward (Vf) (Max) @ If	1.6V @ 1A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	5µA @ 300V
Capacitance @ Vr, F	76pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-206AB, TO-46-3 Metal Can
Supplier Device Package	TO-46
Operating Temperature - Junction	-55°C ~ 225°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GB02505EPL	EXSHINE	A SERIES OF SPECTRAL - RESPONSE SILICON PHOTOCELLS DESIGNED FOR UNIQUE PRODUCT APPLICATIONS	Details
GB02SHT01-46	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 4A	Details
GB02SHT03-46	GeneSiC Semiconductor	DIODE SCHOTTKY 300V 4A	Details
GB02SHT06-46	GeneSiC Semiconductor	DIODE SCHOTTKY 600V 4A	Details
GB02SLT06-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 650V 2A	Details
GB02SLT12-214	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 2A DO214AA	Details
GB02SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 2A TO220AC	Details
GB02SLT12-252	GeneSiC Semiconductor	DIODE SIC SCHKY 1.2KV 2A TO252	Details