GB02SLT12-252 - GeneSiC Semiconductor

Part Number	GB02SLT12-252
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io)	5A (DC)
Voltage - Forward (Vf) (Max) @ If	1.8V @ 2A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	50µA @ 1200V
Capacitance @ Vr, F	131pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GB02SHT01-46	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 4A	Details
GB02SHT03-46	GeneSiC Semiconductor	DIODE SCHOTTKY 300V 4A	Details
GB02SHT06-46	GeneSiC Semiconductor	DIODE SCHOTTKY 600V 4A	Details
GB02SLT06-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 650V 2A	Details
GB02SLT12-214	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 2A DO214AA	Details
GB02SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 2A TO220AC	Details
GB02SLT12-252	GeneSiC Semiconductor	DIODE SIC SCHKY 1.2KV 2A TO252	Details