FDM606P - Fairchild/ON Semiconductor

Part Number	FDM606P
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6.8A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1.92W (Ta)
Rds On (Max) @ Id, Vgs	30 mOhm @ 6.8A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-MLP, MicroFET (3x2)
Package / Case	8-SMD, Flat Lead Exposed Pad
Weight	-
Country of Origin	-

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