FDM15-06KC5 - IXYS

Part Number	FDM15-06KC5
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 100V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	165 mOhm @ 12A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS i4-PAC™
Package / Case	i4-Pac™-5
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	FDM100-0045SP	IXYS	MOSFET N-CH 55V 100A I4-PAC-5	Details
	FDM15-06KC5	IXYS	MOSFET N-CH 600V 15A I4-PAC-5	Details