FDM21-05QC - IXYS

Part Number	FDM21-05QC
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	220 mOhm @ 15A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS i4-PAC™
Package / Case	i4-Pac™-5
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FDM21-05QC	IXYS	MOSFET N-CH 500V 21A I4-PAC-5	Details
FDM2452NZ	FAIRCHIL	FDM2452NZ FAIRCHIL QFN New Original Stocks	Details
FDM2509NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 8.7A 2X5MLP	Details