EPC8002ENGR - EPC

Part Number	EPC8002ENGR
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	65V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.14nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	21pF @ 32.5V
Vgs (Max)	+6V, -5V
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	530 mOhm @ 500mA, 5V
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
EPC8002	EPC	TRANS GAN 65V 2.7A BUMPED DIE	Details
EPC8002ENGR	EPC	TRANS GAN 65V 2A BUMPED DIE	Details
EPC8003ENGR	EPC	TRANS GAN 100V 2.5A BUMPED DIE	Details
EPC8004	EPC	TRANS GAN 40V 2.7A BUMPED DIE	Details
EPC8004ENGR	EPC	TRANS GAN 40V 4.4A BUMPED DIE	Details
EPC8005ENGR	EPC	TRANS GAN 65V 2.9A BUMPED DIE	Details
EPC8007ENGR	EPC	TRANS GAN 40V 3.8A BUMPED DIE	Details
EPC8008ENGR	EPC	TRANS GAN 40V 2.7A BUMPED DIE	Details
EPC8009	EPC	TRANS GAN 65V 2.7A BUMPED DIE	Details
EPC8009ENGR	EPC	TRANS GAN 65V 4.1A BUMPED DIE	Details