DMP56D0UFB-7B - Diodes Incorporated

Part Number	DMP56D0UFB-7B
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.58nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds	50.54pF @ 25V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	425mW (Ta)
Rds On (Max) @ Id, Vgs	6 Ohm @ 100mA, 4V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-DFN1006 (1.0x0.6)
Package / Case	3-UFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMP56D0UFB-7	Diodes Incorporated	MOSFET P-CH 50V 200MA 3DFN	Details
DMP56D0UFB-7B	Diodes Incorporated	MOSFET P-CH 50V 200MA 3DFN	Details
DMP56D0UV-7	Diodes Incorporated	MOSFET 2P-CH 50V 0.16A SOT563	Details