| Part Number | CTLDM8120-M621H TR |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 950mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.56nC @ 4.5V |
| Vgs (Max) | 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 16V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TLM621H |
| Package / Case | 6-XFDFN Exposed Pad |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
CTLDM8002A-M621 BK | Central Semiconductor Corp | MOSFET N-CH 50V DFN6 | Details |
|
CTLDM8002A-M621 TR | Central Semiconductor Corp | MOSFET N-CH 50V DFN6 | Details |
 |
CTLDM8002A-M621H | CENTRAL | SURFACE MOUNT TLM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | Details |
|
CTLDM8002A-M621H BK | Central Semiconductor Corp | MOSFET N-CH 50V DFN6 | Details |
|
CTLDM8002A-M621H TR | Central Semiconductor Corp | MOSFET N-CH 50V DFN6 | Details |
|
CTLDM8120-M621H BK | Central Semiconductor Corp | MOSFET P-CH 20V DFN6 | Details |
|
CTLDM8120-M621H TR | Central Semiconductor Corp | MOSFET P-CH 20V DFN6 | Details |
|
CTLDM8120-M832DS BK | Central Semiconductor Corp | MOSFET DUAL N-CHANNEL | Details |
|
CTLDM8120-M832DS TR | Central Semiconductor Corp | MOSFET DUAL N-CHANNEL | Details |
