CTLDM8120-M621H TR - Central Semiconductor Corp

Part Number	CTLDM8120-M621H TR
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	950mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	150 mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.56nC @ 4.5V
Vgs (Max)	8V
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 16V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TLM621H
Package / Case	6-XFDFN Exposed Pad
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
CTLDM8002A-M621 BK	Central Semiconductor Corp	MOSFET N-CH 50V DFN6	Details
CTLDM8002A-M621 TR	Central Semiconductor Corp	MOSFET N-CH 50V DFN6	Details
CTLDM8002A-M621H	CENTRAL	SURFACE MOUNT TLM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET	Details
CTLDM8002A-M621H BK	Central Semiconductor Corp	MOSFET N-CH 50V DFN6	Details
CTLDM8002A-M621H TR	Central Semiconductor Corp	MOSFET N-CH 50V DFN6	Details
CTLDM8120-M621H BK	Central Semiconductor Corp	MOSFET P-CH 20V DFN6	Details
CTLDM8120-M621H TR	Central Semiconductor Corp	MOSFET P-CH 20V DFN6	Details
CTLDM8120-M832DS BK	Central Semiconductor Corp	MOSFET DUAL N-CHANNEL	Details
CTLDM8120-M832DS TR	Central Semiconductor Corp	MOSFET DUAL N-CHANNEL	Details