• English
      Language Translation
    • English
    • Deutschl
    • Italia
    • France
    • España
    • 대한민국
    • 日本语
    • русский
Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › NESG7030M04-A
NESG7030M04-A

NESG7030M04-A - CEL

Part Number
NESG7030M04-A
Manufacturer
CEL
Brief Description
DISCRETE RF DIODE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NESG7030M04-A PDF online browsing
Datasheet PDF Download
NESG7030M04-A.pdf
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
3767 pcs
Reference Price
USD 0/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for NESG7030M04-A

NESG7030M04-A Detailed Description

Part Number NESG7030M04-A
Part Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 4.3V
Frequency - Transition 5.8GHz
Noise Figure (dB Typ @ f) 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
Gain 14dB ~ 21dB
Power - Max 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 5mA, 2V
Current - Collector (Ic) (Max) 30mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-343F
Supplier Device Package M04
Weight -
Country of Origin -

RELATED PRODUCTS FOR NESG7030M04-A

Image Part Number Manufacturers Description View
NESG7030M04-A NESG7030M04-A CEL DISCRETE RF DIODE Details