TN5325N3-G-P002 - Microchip Technology

Part Number	TN5325N3-G-P002
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	215mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	740mW (Ta)
Rds On (Max) @ Id, Vgs	7 Ohm @ 1A, 10V
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TN5325K1-G	Microchip Technology	MOSFET N-CH 250V SOT23-3	Details
TN5325N3-G	Microchip Technology	MOSFET N-CH 250V 0.215A TO92-3	Details
TN5325N3-G-P002	Microchip Technology	MOSFET N-CH 250V 0.215A TO92-3	Details
TN5325N8-G	Microchip Technology	MOSFET N-CH 250V 0.316A SOT89-3	Details