| Número de pieza | TPCF8A01(TE85L) |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de FET | N-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 20V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2V, 4.5V |
| Rds On (Max) @ Id, Vgs | 49 mOhm @ 1.5A, 4.5V |
| Vgs (th) (Max) @ Id | 1.2V @ 200µA |
| Carga de puerta (Qg) (Max) @ Vgs | 7.5nC @ 5V |
| Vgs (Max) | ±12V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 590pF @ 10V |
| Característica FET | Schottky Diode (Isolated) |
| Disipación de potencia (Máx) | 330mW (Ta) |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete de dispositivo del proveedor | VS-8 (2.9x1.5) |
| Paquete / caja | 8-SMD, Flat Lead |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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TPCF8001 | TOSHIBA | TPCF8001 TOSHIBA SSOP-8 New Original Stocks | Detalles |
|
TPCF8101 | TOSHIBA | TPCF8101 TOSHIBA VSSOP8 New Original Stocks | Detalles |
.JPG "TPCF8101(TE85L,F,M") |
TPCF8101(TE85L,F,M | Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A VS-8 | Detalles |
|
TPCF8102(TE85L,F,M | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A VS8 2-3U1A | Detalles |
|
TPCF8104 | TOSHIBA | TPCF8104 TOSHIBA SSOP8 New Original Stocks | Detalles |
.JPG "TPCF8104(TE85L,F,M") |
TPCF8104(TE85L,F,M | Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | Detalles |
 |
TPCF8107,LF | Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | Detalles |
|
TPCF8201 | TOS | TPCF8201 TOS TSST8 New Original Stocks | Detalles |
|
TPCF8201(TE85L,F,M | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 3A VS-8 | Detalles |
|
TPCF8301 | TOSHIBA | TPCF8301 TOSHIBA SOT-8 New Original Stocks | Detalles |
