| Número de pieza | MJD32C-13 |
|---|---|
| Estado de la pieza | Active |
| Tipo de transistor | PNP |
| Current - Collector (Ic) (Max) | 3A |
| Voltaje: ruptura del emisor del colector (máximo) | 100V |
| Saturación de Vce (Máx) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Corriente - corte de colector (máximo) | 1µA |
| Ganancia de corriente CC (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Potencia - Max | 1.56W |
| Frecuencia - Transición | 3MHz |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Paquete de dispositivo del proveedor | TO-252, (D-Pak) |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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MJD112 | FAIRC | MJD112 FAIRC TO-252.. New Original Stocks | Detalles |
 |
MJD112-001 | ON Semiconductor | TRANS NPN DARL 100V 2A IPAK | Detalles |
|
MJD112-1G | ON Semiconductor | TRANS NPN DARL 100V 2A IPAK | Detalles |
|
MJD112-RTF/E5 | ON | MJD112-RTF/E5 ON TO-252 New Original Stocks | Detalles |
 |
MJD112-TP | Micro Commercial Co | TRANS NPN 100V 2A DPAK | Detalles |
 |
MJD112G | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Detalles |
|
MJD112L | KEC | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) | Detalles |
|
MJD112RL | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Detalles |
|
MJD112RLG | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Detalles |
|
MJD112T4 | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Detalles |
