| Número de pieza | DMN1004UFDF-13 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | N-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 12V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 15A, 4.5V |
| Vgs (th) (Max) @ Id | 1V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 47nC @ 10V |
| Vgs (Max) | ±8V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 2385pF @ 6V |
| Característica FET | - |
| Disipación de potencia (Máx) | 2.1W (Ta) |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete de dispositivo del proveedor | U-DFN2020-6 |
| Paquete / caja | 6-UDFN Exposed Pad |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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DMN100 | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Detalles |
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DMN100-7 | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Detalles |
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DMN100-7-F | Diodes Incorporated | MOSFET N-CH 30V 1.1A SC59-3 | Detalles |
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DMN1002UCA6-7 | Diodes Incorporated | MOSFETN-CHAN 12V X4-DSN3118-6 | Detalles |
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DMN1003UCA6-7 | Diodes Incorporated | MOSFET 2 N-CHANNEL X3-DSN3518-6 | Detalles |
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DMN1004UFDF-13 | Diodes Incorporated | MOSFET N-CH 12V 15A UDFN2020-6 | Detalles |
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DMN1004UFDF-7 | Diodes Incorporated | MOSFET N-CH 12V 15A UDFN2020-6 | Detalles |
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DMN1004UFV-13 | Diodes Incorporated | MOSFET BVDSS: 8V 24V POWERDI3333 | Detalles |
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DMN1004UFV-7 | Diodes Incorporated | MOSFET BVDSS: 8V 24V POWERDI3333 | Detalles |
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DMN1006UCA6-7 | Diodes Incorporated | MOSFET 2 N-CHANNEL X3-DSN2718-6 | Detalles |
