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Casa › Fabricantes › Toshiba Memory America, Inc.
Toshiba Memory America, Inc.
Circuitos integrados
Imagen Número de pieza Descripción Ver
TC58BYG0S3HBAI4 TC58BYG0S3HBAI4 1GB SLC NAND BGA 24NM I TEMP EE Detalles
TC58CYG0S3HRAIG TC58CYG0S3HRAIG 1GB SERIAL NAND 24NM WSON 1.8V Detalles
TC58BYG1S3HBAI4 TC58BYG1S3HBAI4 2GB SLC NAND BGA 24NM I TEMP EE Detalles
TC58NYG1S3HBAI4 TC58NYG1S3HBAI4 2G NAND SLC 24NM BGA Detalles
TC58BVG1S3HBAI4 TC58BVG1S3HBAI4 2GB SLC BENAND 24NM BGA 9X11 EE Detalles
TC58BYG2S0HBAI4 TC58BYG2S0HBAI4 4GB SLC BENAND 24NM BGA 9X11 EE Detalles
TH58NVG2S3HBAI4 TH58NVG2S3HBAI4 4GB SLC NAND 24NM BGA 9X11 EEPR Detalles
TC58NYG2S0HBAI4 TC58NYG2S0HBAI4 4GB SLC NAND 24NM BGA 9X11 1.8V Detalles
TC58CVG1S3HRAIG TC58CVG1S3HRAIG 2GB SERIAL NAND 24NM WSON 3.3V Detalles
TC58CYG1S3HRAIG TC58CYG1S3HRAIG 2GB SERIAL NAND 24NM WSON 1.8V Detalles
THGBMNG5D1LBAIL THGBMNG5D1LBAIL 4GB NAND 15NM EMBEDDED MULTIMEDI Detalles
THGBMNG5D1LBAIT THGBMNG5D1LBAIT IC FLASH 32G MMC 52MHZ 153WFBGA Detalles
TC58CYG2S0HRAIG TC58CYG2S0HRAIG 4GB SERIAL NAND 24NM WSON 1.8V Detalles
TH58BVG2S3HBAI4 TH58BVG2S3HBAI4 4GB SLC BENAND 24NM BGA 9X11 EE Detalles
TH58BYG2S3HBAI4 TH58BYG2S3HBAI4 4G SLC NAND BGA 24NM Detalles
TH58NYG2S3HBAI4 TH58NYG2S3HBAI4 4GB SLC NAND 24NM BGA 9X11 1.8V Detalles
TH58NVG3S0HBAI6 TH58NVG3S0HBAI6 8GB SLC NAND 24NM BGA 6.5X8 3.3V Detalles
TH58NYG3S0HBAI4 TH58NYG3S0HBAI4 8GB SLC NAND 24NM BGA 9X11 3.3V Detalles
THGBMHG6C1LBAU6 THGBMHG6C1LBAU6 8GB NAND 15NM EMBEDDED MULTIMEDI Detalles
TH58BYG3S0HBAI6 TH58BYG3S0HBAI6 8GB SLC NAND 24NM BGA 6.5X8 1.8V Detalles
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