TK040N65Z,S1F - Toshiba Semiconductor and Storage

Part Number	TK040N65Z,S1F
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	57A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40 mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id	4V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6250pF @ 300V
FET Feature	-
Power Dissipation (Max)	360W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
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	TK040N65Z,S1F	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO-	Details