| Part Number | TC58CVG2S0HRAIG |
|---|---|
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gb (512M x 8) |
| Clock Frequency | 104MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 280µs |
| Memory Interface | SPI - Quad I/O |
| Voltage - Supply | 2.7 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (6x8) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
TC58CVG0S3HQAIE | Toshiba Semiconductor and Storage | 1GB SERIAL NAND 24NM SOP16 3.3V | Details |
|
TC58CVG0S3HRAIG | Toshiba Semiconductor and Storage | 1GB SERIAL NAND 24NM WSON8 3.3V | Details |
 |
TC58CVG1S3HRAIG | Toshiba Memory America, Inc. | 2GB SERIAL NAND 24NM WSON 3.3V | Details |
|
TC58CVG2S0HQAIE | Toshiba Semiconductor and Storage | 4GB SERIAL NAND 24NM SOP16 3.3V | Details |
|
TC58CVG2S0HRAIG | Toshiba Semiconductor and Storage | 4GB SERIAL NAND 24NM WSON8 3.3V | Details |
 |
TC58CYG0S3HQAIE | Toshiba Semiconductor and Storage | 1GB SERIAL NAND 24NM SOP16 1.8V | Details |
|
TC58CYG0S3HRAIG | Toshiba Memory America, Inc. | 1GB SERIAL NAND 24NM WSON 1.8V | Details |
|
TC58CYG1S3HRAIG | Toshiba Memory America, Inc. | 2GB SERIAL NAND 24NM WSON 1.8V | Details |
|
TC58CYG2S0HRAIG | Toshiba Memory America, Inc. | 4GB SERIAL NAND 24NM WSON 1.8V | Details |
