SSM3J353F,LF - Toshiba Semiconductor and Storage

Part Number	SSM3J353F,LF
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	159pF @ 15V
Vgs (Max)	+20V, -25V
FET Feature	-
Power Dissipation (Max)	600mW (Ta)
Rds On (Max) @ Id, Vgs	150 mOhm @ 2A, 10V
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	S-Mini
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

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