| Part Number | MT53B128M32D1NP-062 WT:A |
|---|---|
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 4Gb (128M x 32) |
| Clock Frequency | 1600MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Memory Interface | - |
| Voltage - Supply | 1.1V |
| Operating Temperature | -30°C ~ 85°C (TC) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
MT53B128M32D1DS-053 AUT:A | Micron Technology Inc. | IC DRAM 4G 1866MHZ | Details |
|
MT53B128M32D1DS-053 AUT:A TR | Micron Technology Inc. | IC DRAM 4G 1866MHZ | Details |
 |
MT53B128M32D1DS-062 AAT:A | Micron Technology Inc. | IC DRAM 4G 1600MHZ | Details |
|
MT53B128M32D1DS-062 AAT:A TR | Micron Technology Inc. | IC DRAM 4G 1600MHZ | Details |
|
MT53B128M32D1DS-062 AIT:A | Micron Technology Inc. | IC DRAM 4G 1600MHZ | Details |
|
MT53B128M32D1DS-062 AIT:A TR | Micron Technology Inc. | IC DRAM 4G 1600MHZ | Details |
|
MT53B128M32D1DS-062 AUT:A | Micron Technology Inc. | IC DRAM 4G 1600MHZ | Details |
|
MT53B128M32D1DS-062 AUT:A TR | Micron Technology Inc. | IC DRAM 4G 1600MHZ | Details |
|
MT53B128M32D1NP-062 AAT:A | Micron Technology Inc. | IC DRAM 4G 1600MHZ | Details |
|
MT53B128M32D1NP-062 AAT:A TR | Micron Technology Inc. | IC DRAM 4G 1600MHZ | Details |
