IXTP1R6N50D2 - IXYS

Part Number	IXTP1R6N50D2
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	23.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	645pF @ 25V
Vgs (Max)	±20V
FET Feature	Depletion Mode
Power Dissipation (Max)	100W (Tc)
Rds On (Max) @ Id, Vgs	2.3 Ohm @ 800mA, 0V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Weight	-
Country of Origin	-

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