IXTP05N100P - IXYS

Part Number	IXTP05N100P
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	500mA (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	8.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	196pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Rds On (Max) @ Id, Vgs	30 Ohm @ 250mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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IXTP05N100M	IXYS	MOSFET N-CH 1000V 700MA TO-220	Details
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IXTP08N100D2	IXYS	MOSFET N-CH 1000V 0.8A TO220AB	Details
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IXTP08N120P	IXYS	MOSFET N-CH 1200V 800MA TO-220	Details