IXTP08N100P

IXTP08N100P - IXYS

Part Number
IXTP08N100P
Manufacturer
IXYS
Brief Description
MOSFET N-CH 1000V 800MA TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXTP08N100P PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
14820 pcs
Reference Price
USD 1.7326/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for IXTP08N100P

IXTP08N100P Detailed Description

Part Number IXTP08N100P
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Rds On (Max) @ Id, Vgs 20 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Weight -
Country of Origin -

RELATED PRODUCTS FOR IXTP08N100P