| Part Number | BSC0910NDIATMA1 |
|---|---|
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A, 31A |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 12V |
| Power - Max | 1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TISON-8 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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BSC0901NS | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
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BSC0901NSATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
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BSC0901NSI | Infineon Technologies | MOSFET N-CH 30V 28A 8TDSON | Details |
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BSC0901NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 28A 8TDSON | Details |
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BSC0902NS | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
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BSC0902NSATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
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BSC0902NSI | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
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BSC0902NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
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BSC0904NSI | Infineon Technologies | MOSFET N-CH 30V 20A 8TDSON | Details |
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BSC0904NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 20A 8TDSON | Details |
