Part Number | 2N7635-GA |
---|---|
Part Status | Active |
FET Type | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |
Drive Voltage (Max Rds On,Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 35V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 47W (Tc) |
Rds On (Max) @ Id, Vgs | 415 mOhm @ 4A |
Operating Temperature | -55°C ~ 225°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-257 |
Package / Case | TO-257-3 |
Weight | - |
Country of Origin | - |