| Part Number | 1N8026-GA |
|---|---|
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 8A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 2.5A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 10µA @ 1200V |
| Capacitance @ Vr, F | 237pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-257-3 |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
1N8024-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | Details |
|
1N8026-GA | GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | Details |
|
1N8028-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | Details |
|
1N8030-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | Details |
 |
1N8031-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | Details |
|
1N8032-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | Details |
|
1N8033-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | Details |
|
1N8034-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | Details |
|
1N8035-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | Details |
 |
1N81 | EXSHINE | GOLD BONDED DIODES | Details |
