1N8031-GA - GeneSiC Semiconductor

Part Number	1N8031-GA
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.5V @ 1A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	5µA @ 650V
Capacitance @ Vr, F	76pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-276AA
Supplier Device Package	TO-276
Operating Temperature - Junction	-55°C ~ 250°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
1N8024-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257	Details
1N8026-GA	GeneSiC Semiconductor	DIODE SILICON 1.2KV 8A TO257	Details
1N8028-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 9.4A TO257	Details
1N8030-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 750MA TO257	Details
1N8031-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 1A TO276	Details
1N8032-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 2.5A TO257	Details
1N8033-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 4.3A TO276	Details
1N8034-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 9.4A TO257	Details
1N8035-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 14.6A TO276	Details
1N81	EXSHINE	GOLD BONDED DIODES	Details