1N8028-GA - GeneSiC Semiconductor

Part Number	1N8028-GA
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io)	9.4A (DC)
Voltage - Forward (Vf) (Max) @ If	1.6V @ 10A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	20µA @ 1200V
Capacitance @ Vr, F	884pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-257-3
Supplier Device Package	TO-257
Operating Temperature - Junction	-55°C ~ 250°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
1N8024-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257	Details
1N8026-GA	GeneSiC Semiconductor	DIODE SILICON 1.2KV 8A TO257	Details
1N8028-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 9.4A TO257	Details
1N8030-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 750MA TO257	Details
1N8031-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 1A TO276	Details
1N8032-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 2.5A TO257	Details
1N8033-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 4.3A TO276	Details
1N8034-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 9.4A TO257	Details
1N8035-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 14.6A TO276	Details
1N81	EXSHINE	GOLD BONDED DIODES	Details