| Artikelnummer | GA100JT17-227 |
|---|---|
| Teilstatus | Active |
| FET Typ | - |
| Technologie | SiC (Silicon Carbide Junction Transistor) |
| Drain auf Source-Spannung (Vdss) | 1700V |
| Strom - Dauerablass (Id) @ 25 ° C | 160A |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | - |
| Vgs (th) (Max) @ Id | - |
| Gate Ladung (Qg) (Max) @ Vgs | - |
| Eingangskapazität (Ciss) (Max) @ Vds | 14400pF @ 800V |
| Vgs (Max) | - |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 535W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 10 mOhm @ 100A |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Befestigungsart | Chassis Mount |
| Lieferantengerätepaket | SOT-227 |
| Paket / Fall | SOT-227-4, miniBLOC |
| Gewicht | - |
| Ursprungsland | - |
| Bild | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
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