VS-100MT060WSP - Vishay Semiconductor Diodes Division

Part Number	VS-100MT060WSP
Part Status	Active
IGBT Type	-
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	107A
Power - Max	403W
Vce(on) (Max) @ Vge, Ic	2.49V @ 15V, 60A
Current - Collector Cutoff (Max)	100µA
Input Capacitance (Cies) @ Vce	9.5nF @ 30V
Input	Single Phase Bridge Rectifier
NTC Thermistor	Yes
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	12-MTP Module
Supplier Device Package	MTP
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
VS-100BGQ015HF4	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 100A POWERTAB	Details
VS-100BGQ030	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 100A POWIRTAB	Details
VS-100BGQ030HF4	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 100A POWERTAB	Details
VS-100BGQ045	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 100A POWIRTAB	Details
VS-100BGQ045HF4	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 100A POWERTAB	Details
VS-100BGQ100	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 100A POWIRTA	Details
VS-100BGQ100HF4	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 100A POWERTAB	Details
VS-100MT060WDF	Vishay Semiconductor Diodes Division	IGBT 600V 121A 462W MTP	Details
VS-100MT060WSP	Vishay Semiconductor Diodes Division	IGBT	Details
VS-100MT160P-P	Vishay Semiconductor Diodes Division	MOD BRIDGE 3PH 100A 1600V MTP	Details