SQD25N06-22L_T4GE3 - Vishay Siliconix

Part Number	SQD25N06-22L_T4GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	22 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1975pF @ 25V
FET Feature	-
Power Dissipation (Max)	62W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQD25N06-22L_GE3	Vishay Siliconix	MOSFET N-CH 60V 25A TO252	Details
SQD25N06-22L_T4GE3	Vishay Siliconix	MOSFET N-CH 60V 25A TO252AA	Details
SQD25N15-52_GE3	Vishay Siliconix	MOSFET N-CH 150V 25A TO252	Details