SI2308CDS-T1-GE3 - Vishay Siliconix

Part Number	SI2308CDS-T1-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	144 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	105pF @ 30V
FET Feature	-
Power Dissipation (Max)	1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI2308BDS	VISHAY	N-Channel 60-V (D-S) MOSFET	Details
SI2308BDS-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 2.3A SOT23-3	Details
SI2308BDS-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 2.3A SOT23-3	Details
SI2308CDS-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 2.6A SOT23-3	Details
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SI2308DS-T1	VIS	SI2308DS-T1 VIS SOT23 New Original Stocks	Details
SI2308DS-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 2A SOT23-3	Details