TPH6R30ANL,L1Q

TPH6R30ANL,L1Q - Toshiba Semiconductor and Storage

Part Number
TPH6R30ANL,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPH6R30ANL,L1Q PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
388142 pcs
Reference Price
USD 0.4242/pcs
Our Price
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TPH6R30ANL,L1Q Detailed Description

Part Number TPH6R30ANL,L1Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 66A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.3 mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 50V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 54W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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