TPH5R906NH,L1Q - Toshiba Semiconductor and Storage

Part Number	TPH5R906NH,L1Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	28A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 30V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs	5.9 mOhm @ 14A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-