TPC8A05-H(TE12L,QM - Toshiba Semiconductor and Storage

Part Number	TPC8A05-H(TE12L,QM
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 10V
Vgs (Max)	±20V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	1W (Ta)
Rds On (Max) @ Id, Vgs	13.3 mOhm @ 5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP (5.5x6.0)
Package / Case	8-SOIC (0.173", 4.40mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPC8A01	TOSHIBA	TPC8A01 TOSHIBA SOP8 New Original Stocks	Details
TPC8A02	TOSHIBA	TPC8A02 TOSHIBA SOP-8 New Original Stocks	Details
TPC8A02-H	TOSHIBA	TPC8A02-H TOSHIBA SOP8 New Original Stocks	Details
TPC8A02-H(TE12L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 16A SOP8 2-6J1B	Details
TPC8A03	TOSHIBA	TPC8A03 TOSHIBA SOP-8 New Original Stocks	Details
TPC8A03-H	TOSHIBA	TPC8A03-H TOSHIBA SOP-8 New Original Stocks	Details
TPC8A04-H	TOSHIBA	TPC8A04-H TOSHIBA SOP-8 New Original Stocks	Details
TPC8A05-H	TOS	TPC8A05-H TOS SO8 New Original Stocks	Details
TPC8A05-H(TE12L,QM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 10A 8SOP	Details
TPC8A06-H	TOS	TPC8A06-H TOS SOP-8 New Original Stocks	Details