TK65G10N1,RQ - Toshiba Semiconductor and Storage

Part Number	TK65G10N1,RQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	65A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	81nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Rds On (Max) @ Id, Vgs	4.5 mOhm @ 32.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

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