| Part Number | TK65G10N1,RQ |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 81nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 32.5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
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