TK65E10N1,S1X Detailed Description
| Part Number |
TK65E10N1,S1X |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
100V |
| Current - Continuous Drain (Id) @ 25°C |
148A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
81nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
5400pF @ 50V |
| Vgs (Max) |
±20V |
| FET Feature |
- |
| Power Dissipation (Max) |
192W (Tc) |
| Rds On (Max) @ Id, Vgs |
4.8 mOhm @ 32.5A, 10V |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220 |
| Package / Case |
TO-220-3 |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR TK65E10N1,S1X
