TK65E10N1,S1X

TK65E10N1,S1X - Toshiba Semiconductor and Storage

Part Number
TK65E10N1,S1X
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N CH 100V 148A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK65E10N1,S1X PDF online browsing
Datasheet PDF Download
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
2582 pcs
Reference Price
USD 2.93/pcs
Our Price
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TK65E10N1,S1X Detailed Description

Part Number TK65E10N1,S1X
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 148A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 192W (Tc)
Rds On (Max) @ Id, Vgs 4.8 mOhm @ 32.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Weight -
Country of Origin -

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