TK20P04M1,RQ(S - Toshiba Semiconductor and Storage

Part Number	TK20P04M1,RQ(S
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	985pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	27W (Tc)
Rds On (Max) @ Id, Vgs	29 mOhm @ 10A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TK20P04M1,RQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 20A DPAK-3	Details
TK20P100RJE	EXSHINE	20 and 15 Watt TO-220 Package Thick and Thin Film	Details
TK20P10K0JE	EXSHINE	20 and 15 Watt TO-220 Package Thick and Thin Film	Details
TK20P10R0JE	EXSHINE	20 and 15 Watt TO-220 Package Thick and Thin Film	Details
TK20P1K00JE	Ohmite	RES 1K OHM 20W 5% TO220	Details
TK20P1R00JE	Ohmite	RES 1 OHM 20W 5% TO220	Details
TK20P300RJE	Ohmite	RES 300 OHM 20W 5% TO220	Details
TK20P30R0JE	EXSHINE	20 and 15 Watt TO-220 Package Thick and Thin Film	Details
TK20P3K00JE	Ohmite	RES 3K OHM 20W 5% TO220	Details
TK20P3R00JE	Ohmite	RES 3 OHM 20W 5% TO220	Details