| Part Number | SSM6J512NU,LF |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 8V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 6V |
| Vgs (Max) | ±10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Rds On (Max) @ Id, Vgs | 16.2 mOhm @ 4A, 8V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-UDFNB (2x2) |
| Package / Case | 6-WDFN Exposed Pad |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SSM6J06FU | TOS | SSM6J06FU TOS SMD or Through Hole New Original Stocks | Details |
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SSM6J07FU | TOS | SSM6J07FU TOS SMD or Through Hole New Original Stocks | Details |
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SSM6J08FU | TOSHIBA | SSM6J08FU TOSHIBA SC70-6 New Original Stocks | Details |
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SSM6J206FE | TOSHIBA | SSM6J206FE TOSHIBA ES6 New Original Stocks | Details |
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SSM6J207FE,LF | Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 | Details |
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SSM6J212FE,LF | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | Details |
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SSM6J213FE(TE85L,F | Toshiba Semiconductor and Storage | MOSFET P CH 20V 2.6A ES6 | Details |
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SSM6J214FE(TE85L,F | Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE PCH | Details |
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SSM6J215FE(TE85L,F | Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | Details |
