SSM6J511NU,LF - Toshiba Semiconductor and Storage

Part Number	SSM6J511NU,LF
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	47nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	3350pF @ 6V
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	9.1 mOhm @ 4A, 8V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-UDFNB (2x2)
Package / Case	6-WDFN Exposed Pad
Weight	-
Country of Origin	-

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