2SK879-GR(TE85L,F) - Toshiba Semiconductor and Storage

Part Number	2SK879-GR(TE85L,F)
Part Status	Active
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	-
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	2.6mA @ 10V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds	8.2pF @ 10V
Resistance - RDS(On)	-
Power - Max	100mW
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
2SK879-GR	TOSHIBA	2SK879-GR TOSHIBA SOT-32.. New Original Stocks	Details
2SK879-GR(TE85L,F)	Toshiba Semiconductor and Storage	JFET N-CH 0.1W USM	Details
2SK879-O	TOS	2SK879-O TOS SOT-32.. New Original Stocks	Details
2SK879-Y(TE85L,F)	Toshiba Semiconductor and Storage	JFET N-CH 0.1W USM	Details