S1GLR2G - Taiwan Semiconductor Corporation

Part Number	S1GLR2G
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	400V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.8µs
Current - Reverse Leakage @ Vr	5µA @ 400V
Capacitance @ Vr, F	9pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-219AB
Supplier Device Package	Sub SMA
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
S1G	Fairchild/ON Semiconductor	DIODE GEN PURP 400V 1A SMA	Details
S1G M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Details
S1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Details
S1G-13	Diodes Incorporated	DIODE GEN PURP 400V 1A SMA	Details
S1G-13-F	Diodes Incorporated	DIODE GEN PURP 400V 1A SMA	Details
S1G-6904LF/11T	VISHAY	S1G-6904LF/11T VISHAY SMD or Through Hole New Original Stocks	Details
S1G-E3	vishay	S1G-E3 vishay DO214 New Original Stocks	Details
S1G-E3/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC	Details
S1G-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC	Details
S1G-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC	Details