S1G-E3/61T - Vishay Semiconductor Diodes Division

Part Number	S1G-E3/61T
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	400V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.8µs
Current - Reverse Leakage @ Vr	1µA @ 400V
Capacitance @ Vr, F	12pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Supplier Device Package	DO-214AC (SMA)
Operating Temperature - Junction	-55°C ~ 150°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
S1G-13	Diodes Incorporated	DIODE GEN PURP 400V 1A SMA	Details
S1G-13-F	Diodes Incorporated	DIODE GEN PURP 400V 1A SMA	Details
S1G-6904LF/11T	VISHAY	S1G-6904LF/11T VISHAY SMD or Through Hole New Original Stocks	Details
S1G-E3	vishay	S1G-E3 vishay DO214 New Original Stocks	Details
S1G-E3/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC	Details
S1G-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC	Details
S1G-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC	Details
S1G-F	SMC Diode Solutions	SMT GLASS PASSIVATED RECTIFIER	Details
S1G-JR2	Taiwan Semiconductor Corporation	STANDARD RECOVERY RECTIFIER	Details
S1G-JR3	Taiwan Semiconductor Corporation	STANDARD RECOVERY RECTIFIER	Details