BSM180D12P2C101

BSM180D12P2C101 - Rohm Semiconductor

Part Number
BSM180D12P2C101
Manufacturer
Rohm Semiconductor
Brief Description
MOSFET 2N-CH 1200V 180A MODULE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSM180D12P2C101 PDF online browsing
Datasheet PDF Download
BSM180D12P2C101.pdf
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
85 pcs
Reference Price
USD 434.97/pcs
Our Price
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BSM180D12P2C101 Detailed Description

Part Number BSM180D12P2C101
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 180A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V
Power - Max 1130W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type -
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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