N0300N-T1B-AT - Renesas Electronics America

Part Number	N0300N-T1B-AT
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	7.4nC @ 10V (Typ)
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta)
Rds On (Max) @ Id, Vgs	50 mOhm @ 2A, 10V
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	SC-96-3, Thin Mini Mold
Package / Case	SC-96
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
N0300N	RENESAS	N0300N RENESAS SOT-23 New Original Stocks	Details
N0300N-T1B-AT	Renesas Electronics America	MOSFET N-CH 30V 4.5A SC96	Details
N0300P	RENESAS	N0300P RENESAS SOT-23 New Original Stocks	Details
N0300P-T1B-AT	Renesas Electronics America	TRANSISTOR	Details