MTD10N10ELT4 - ON Semiconductor

Part Number	MTD10N10ELT4
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	1040pF @ 25V
Vgs (Max)	±15V
FET Feature	-
Power Dissipation (Max)	1.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs	220 mOhm @ 5A, 5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

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